Temperature Charactristics of Forward Biased Si Diode's Voltage
نویسندگان
چکیده
منابع مشابه
Spin accumulation in forward-biased MnAs/GaAs Schottky diodes.
We describe a new means for all-electrical generation of spin polarization in semiconductors. In contrast with spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe accumulation at the metal-semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemp...
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Article history: Received 30 June 2014 Accepted 8 July 2014 Available online xxxx
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ژورنال
عنوان ژورنال: Transactions of the Society of Instrument and Control Engineers
سال: 1970
ISSN: 0453-4654
DOI: 10.9746/sicetr1965.6.289